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| LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features LMBT2222ATT1G 3 1 2 * We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device LMBT2222ATT1G LMBT2222ATT3G Maring 1P 1P Shipping SC-89 COLLECTOR 3 1 BASE 2 EMITTER 3000 / Tape & Reel 10000 / Tape & Reel MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Max 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Thermal Resistance, Junction-to-Ambient Operating and Storage Junction Temperature Range Symbol PD RqJA TJ, Tstg Max 150 833 -55 to +150 Unit mW C/W C 1P M G 1 1P M G G = Specific Device Code = Date Code = Pb-Free Package ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 - - - - - 20 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit 1/3 LESHAN RADIO COMPANY, LTD. LMBT2222ATT1G ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small -Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf - - - - 10 25 225 ns 60 ns fT Cobo Cibo hie hre hfe hoe NF 250 - - 0.25 - 75 25 - - 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF kW X 10- 4 - mmhos dB HFE 35 50 75 100 40 VCE(sat) - - VBE(sat) 0.6 - 1.2 2.0 0.3 1.0 Vdc - - - - - Vdc - 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2/3 LESHAN RADIO COMPANY, LTD. LMBT2222ATT1G SC-89 A -XNOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF --- --- 0.063 3 1 2 B -Y- S K G 2 PL D 0.08 (0.003) M 3 PL XY M C N J -TSEATING PLANE DIM A B C D G H J K L M N S MIN 0.059 0.030 0.024 0.009 0.004 0.012 --- --- 0.059 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 H H L G RECOMMENDED PATTERN OF SOLDER PADS 3/3 |
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